BSC018NE2LSIATMA1 Vidiny (USD) [159811pcs Stock]
- 1 pcs$0.23145
- Ampahany:
- BSC018NE2LSIATMA1
- Manufacturer:
- Infineon Technologies
- Famaritana antsipirihany:
- MOSFET N-CH 25V 29A TDSON-8.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Diodes - Mpihazakazaka - Iray, Transistor - Tanjona manokana, Ny kristianao - SCR, Transistors - FETs, MOSFETs - Single, Tratrao - TRIACs, Transistors - IGBTs - tokan-tena, Diodes - Miova endrika ny habeny (varicaps, varact and Transistors - IGBTs - Tafidina ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Infineon Technologies BSC018NE2LSIATMA1 electronic components. BSC018NE2LSIATMA1 can be shipped within 24 hours after order. If you have any demands for BSC018NE2LSIATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSC018NE2LSIATMA1 Toetran'ny vokatra
Ampahany :
BSC018NE2LSIATMA1
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 25V 29A TDSON-8
Series :
OptiMOS™
Ampahany :
Active
Type FET :
N-Channel
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
25V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
29A (Ta), 100A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
1.8 mOhm @ 30A, 10V
Vgs (th) (Max) @ Id :
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
36nC @ 10V
Vgs (Max) :
±20V
Fampiasana masinina (Ciss) (Max) @ Vds :
2500pF @ 12V
Fihetsika FET :
-
Fandroahana herinaratra (Max) :
2.5W (Ta), 69W (Tc)
Ny mari-pana :
-55°C ~ 150°C (TJ)
Type Type :
Surface Mount
Package Fitaovana mpamatsy :
PG-TDSON-8
Famonosana / tranga :
8-PowerTDFN
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