SI7190DP-T1-GE3 Vidiny (USD) [89398pcs Stock]
- 1 pcs$0.96999
- 10 pcs$0.87550
- 100 pcs$0.70345
- 500 pcs$0.54713
- 1,000 pcs$0.45334
- Ampahany:
- SI7190DP-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Famaritana antsipirihany:
- MOSFET N-CH 250V 18.4A PPAK SO-8.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistorio - Bipolar (BJT) - Arrays, Diodes - Miova endrika ny habeny (varicaps, varact, Transistor - FET, MOSFET - Arrays, Diodes - Rectifiers Bridge, Diodes - Mpihazakazaka - Iray, Transistors - Bipolar (BJT) - Single, mialoha alik, Diodes - RF and Transistors - FETs, MOSFETs - Single ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Vishay Siliconix SI7190DP-T1-GE3 electronic components. SI7190DP-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI7190DP-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI7190DP-T1-GE3 Toetran'ny vokatra
Ampahany :
SI7190DP-T1-GE3
Manufacturer :
Vishay Siliconix
Description :
MOSFET N-CH 250V 18.4A PPAK SO-8
Series :
TrenchFET®
Ampahany :
Active
Type FET :
N-Channel
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
250V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
18.4A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) :
6V, 10V
Rds On (Max) @ Id, Vgs :
118 mOhm @ 4.4A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
72nC @ 10V
Vgs (Max) :
±20V
Fampiasana masinina (Ciss) (Max) @ Vds :
2214pF @ 125V
Fihetsika FET :
-
Fandroahana herinaratra (Max) :
5.4W (Ta), 96W (Tc)
Ny mari-pana :
-55°C ~ 150°C (TJ)
Type Type :
Surface Mount
Package Fitaovana mpamatsy :
PowerPAK® SO-8
Famonosana / tranga :
PowerPAK® SO-8
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