Infineon Technologies - IPB80N06S209ATMA2

KEY Part #: K6419418

IPB80N06S209ATMA2 Vidiny (USD) [110838pcs Stock]

  • 1 pcs$0.33371
  • 1,000 pcs$0.31781

Ampahany:
IPB80N06S209ATMA2
Manufacturer:
Infineon Technologies
Famaritana antsipirihany:
MOSFET N-CH 55V 80A TO263-3.
Manufacturer's standard lead time:
Ao amin'ny staoky
Fiainana an-trano:
Iray taona
Chip From:
Hong Kong
RoHS:
Fomba fandoavam-bola:
Fomba fandefasana:
Fianakaviana:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPB80N06S209ATMA2 Toetran'ny vokatra

Ampahany : IPB80N06S209ATMA2
Manufacturer : Infineon Technologies
Description : MOSFET N-CH 55V 80A TO263-3
Series : OptiMOS™
Ampahany : Active
Type FET : N-Channel
teknolojia : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 55V
Ankehitriny - Drain mitohy (Id) @ 25 ° C : 80A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 8.8 mOhm @ 50A, 10V
Vgs (th) (Max) @ Id : 4V @ 125µA
Gate Charge (Qg) (Max) @ Vgs : 80nC @ 10V
Vgs (Max) : ±20V
Fampiasana masinina (Ciss) (Max) @ Vds : 2360pF @ 25V
Fihetsika FET : -
Fandroahana herinaratra (Max) : 190W (Tc)
Ny mari-pana : -55°C ~ 175°C (TJ)
Type Type : Surface Mount
Package Fitaovana mpamatsy : PG-TO263-3-2
Famonosana / tranga : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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