Manufacturer :
Rohm Semiconductor
Description :
RS1P600BE IS A POWER MOSFET WITH
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
100V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
17.5A (Ta), 60A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
9.7 mOhm @ 17.5A, 10V
Vgs (th) (Max) @ Id :
4V @ 500µA
Gate Charge (Qg) (Max) @ Vgs :
33nC @ 10V
Fampiasana masinina (Ciss) (Max) @ Vds :
2200pF @ 50V
Fandroahana herinaratra (Max) :
3W (Ta), 35W (Tc)
Ny mari-pana :
150°C (TJ)
Type Type :
Surface Mount
Package Fitaovana mpamatsy :
8-HSOP
Famonosana / tranga :
8-PowerTDFN