Toshiba Semiconductor and Storage - RN1106MFV(TL3,T)

KEY Part #: K6527870

[2688pcs Stock]


    Ampahany:
    RN1106MFV(TL3,T)
    Manufacturer:
    Toshiba Semiconductor and Storage
    Famaritana antsipirihany:
    TRANS PREBIAS NPN 0.15W VESM.
    Manufacturer's standard lead time:
    Ao amin'ny staoky
    Fiainana an-trano:
    Iray taona
    Chip From:
    Hong Kong
    RoHS:
    Fomba fandoavam-bola:
    Fomba fandefasana:
    Fianakaviana:
    KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistors - JFET, Transistor - Unjunction Programmable, Ny thyristors - DIAC, SIDACs, Transistors - Bipolar (BJT) - Single, Transistors - Bipolar (BJT) - Single, mialoha alik, Transistors - FET, MOSFET - RF, Tratrao - TRIACs and Transistorio - Bipolar (BJT) - Arrays ...
    Ny tombony azo amin'ny fifaninanana:
    We specialize in Toshiba Semiconductor and Storage RN1106MFV(TL3,T) electronic components. RN1106MFV(TL3,T) can be shipped within 24 hours after order. If you have any demands for RN1106MFV(TL3,T), Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    RN1106MFV(TL3,T) Toetran'ny vokatra

    Ampahany : RN1106MFV(TL3,T)
    Manufacturer : Toshiba Semiconductor and Storage
    Description : TRANS PREBIAS NPN 0.15W VESM
    Series : -
    Ampahany : Obsolete
    Type Transistor : NPN - Pre-Biased
    Ankehitriny - Collector (Ic) (Max) : 100mA
    Volonta - Famoronan'ny mpanangom-bokatra : 50V
    Resistor - Base (R1) : 4.7 kOhms
    Resistor - Emitter Base (R2) : 47 kOhms
    DC ankehitriny Gain (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V
    Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 5mA
    Ankehitriny - Collector Cutoff (Max) : 500nA
    Frequency - Tetezamita : -
    Hery - Max : 150mW
    Type Type : Surface Mount
    Famonosana / tranga : SOT-723
    Package Fitaovana mpamatsy : VESM