Ampahany :
RN1106MFV(TL3,T)
Manufacturer :
Toshiba Semiconductor and Storage
Description :
TRANS PREBIAS NPN 0.15W VESM
Type Transistor :
NPN - Pre-Biased
Ankehitriny - Collector (Ic) (Max) :
100mA
Volonta - Famoronan'ny mpanangom-bokatra :
50V
Resistor - Base (R1) :
4.7 kOhms
Resistor - Emitter Base (R2) :
47 kOhms
DC ankehitriny Gain (hFE) (Min) @ Ic, Vce :
80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic :
300mV @ 500µA, 5mA
Ankehitriny - Collector Cutoff (Max) :
500nA
Frequency - Tetezamita :
-
Type Type :
Surface Mount
Famonosana / tranga :
SOT-723
Package Fitaovana mpamatsy :
VESM