Ampahany :
SPI11N60C3HKSA1
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 600V 11A TO-262
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
600V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
11A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
380 mOhm @ 7A, 10V
Vgs (th) (Max) @ Id :
3.9V @ 500µA
Gate Charge (Qg) (Max) @ Vgs :
60nC @ 10V
Fampiasana masinina (Ciss) (Max) @ Vds :
1200pF @ 25V
Fandroahana herinaratra (Max) :
125W (Tc)
Ny mari-pana :
-55°C ~ 150°C (TJ)
Package Fitaovana mpamatsy :
PG-TO262-3-1
Famonosana / tranga :
TO-262-3 Long Leads, I²Pak, TO-262AA