TK39J60W,S1VQ Vidiny (USD) [9590pcs Stock]
- 1 pcs$4.72871
- 25 pcs$3.87569
- 100 pcs$3.49762
- 500 pcs$2.93043
- Ampahany:
- TK39J60W,S1VQ
- Manufacturer:
- Toshiba Semiconductor and Storage
- Famaritana antsipirihany:
- MOSFET N-CH 600V 38.8A TO-3P.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistors - FET, MOSFET - RF, Diodes - Zener - Iray, Transistors - Bipolar (BJT) - Single, Diode - Zener - Arrays, Transistors - Bipolar (BJT) - RF, Transistor - Unjunction Programmable, Diodes - Mpihazakazaka - Iray and Diode - Mpitaovana - Arrays ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Toshiba Semiconductor and Storage TK39J60W,S1VQ electronic components. TK39J60W,S1VQ can be shipped within 24 hours after order. If you have any demands for TK39J60W,S1VQ, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK39J60W,S1VQ Toetran'ny vokatra
Ampahany :
TK39J60W,S1VQ
Manufacturer :
Toshiba Semiconductor and Storage
Description :
MOSFET N-CH 600V 38.8A TO-3P
Series :
DTMOSIV
Ampahany :
Active
Type FET :
N-Channel
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
600V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
38.8A (Ta)
Fandefasana fiara (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
65 mOhm @ 19.4A, 10V
Vgs (th) (Max) @ Id :
3.7V @ 1.9mA
Gate Charge (Qg) (Max) @ Vgs :
110nC @ 10V
Vgs (Max) :
±30V
Fampiasana masinina (Ciss) (Max) @ Vds :
4100pF @ 300V
Fihetsika FET :
Super Junction
Fandroahana herinaratra (Max) :
270W (Tc)
Ny mari-pana :
150°C (TJ)
Type Type :
Through Hole
Package Fitaovana mpamatsy :
TO-3P(N)
Famonosana / tranga :
TO-3P-3, SC-65-3
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