Renesas Electronics America - H7N1002LSTL-E

KEY Part #: K6402401

[2717pcs Stock]


    Ampahany:
    H7N1002LSTL-E
    Manufacturer:
    Renesas Electronics America
    Famaritana antsipirihany:
    MOSFET N-CH 100V LDPAK.
    Manufacturer's standard lead time:
    Ao amin'ny staoky
    Fiainana an-trano:
    Iray taona
    Chip From:
    Hong Kong
    RoHS:
    Fomba fandoavam-bola:
    Fomba fandefasana:
    Fianakaviana:
    KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Modules maotera mpamily, Transistors - Bipolar (BJT) - RF, Transistor - FET, MOSFET - Arrays, Diodes - Mpihazakazaka - Iray, Diodes - Miova endrika ny habeny (varicaps, varact, Transistorio - Bipolar (BJT) - Arrays, mialoha ali, Transistor - Tanjona manokana and Ny thyristors - DIAC, SIDACs ...
    Ny tombony azo amin'ny fifaninanana:
    We specialize in Renesas Electronics America H7N1002LSTL-E electronic components. H7N1002LSTL-E can be shipped within 24 hours after order. If you have any demands for H7N1002LSTL-E, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    H7N1002LSTL-E Toetran'ny vokatra

    Ampahany : H7N1002LSTL-E
    Manufacturer : Renesas Electronics America
    Description : MOSFET N-CH 100V LDPAK
    Series : -
    Ampahany : Active
    Type FET : N-Channel
    teknolojia : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 100V
    Ankehitriny - Drain mitohy (Id) @ 25 ° C : 75A (Ta)
    Fandefasana fiara (Max Rds On, Min Rds On) : 4.5V, 10V
    Rds On (Max) @ Id, Vgs : 10 mOhm @ 37.5A, 10V
    Vgs (th) (Max) @ Id : -
    Gate Charge (Qg) (Max) @ Vgs : 155nC @ 10V
    Vgs (Max) : ±20V
    Fampiasana masinina (Ciss) (Max) @ Vds : 9700pF @ 10V
    Fihetsika FET : -
    Fandroahana herinaratra (Max) : 100W (Tc)
    Ny mari-pana : 150°C (TJ)
    Type Type : Surface Mount
    Package Fitaovana mpamatsy : 4-LDPAK
    Famonosana / tranga : SC-83