Infineon Technologies - BSP129E6327

KEY Part #: K6413364

[13126pcs Stock]


    Ampahany:
    BSP129E6327
    Manufacturer:
    Infineon Technologies
    Famaritana antsipirihany:
    MOSFET N-CH 240V 350MA SOT223.
    Manufacturer's standard lead time:
    Ao amin'ny staoky
    Fiainana an-trano:
    Iray taona
    Chip From:
    Hong Kong
    RoHS:
    Fomba fandoavam-bola:
    Fomba fandefasana:
    Fianakaviana:
    KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistors - JFET, Diodes - RF, Transistors - Bipolar (BJT) - RF, Ny thyristors - DIAC, SIDACs, Ny kristianao - SCR, Transistors - FET, MOSFET - RF, Transistor - Tanjona manokana and Transistors - Bipolar (BJT) - Single, mialoha alik ...
    Ny tombony azo amin'ny fifaninanana:
    We specialize in Infineon Technologies BSP129E6327 electronic components. BSP129E6327 can be shipped within 24 hours after order. If you have any demands for BSP129E6327, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    BSP129E6327 Toetran'ny vokatra

    Ampahany : BSP129E6327
    Manufacturer : Infineon Technologies
    Description : MOSFET N-CH 240V 350MA SOT223
    Series : SIPMOS®
    Ampahany : Obsolete
    Type FET : N-Channel
    teknolojia : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 240V
    Ankehitriny - Drain mitohy (Id) @ 25 ° C : 350mA (Ta)
    Fandefasana fiara (Max Rds On, Min Rds On) : 0V, 10V
    Rds On (Max) @ Id, Vgs : 6 Ohm @ 350mA, 10V
    Vgs (th) (Max) @ Id : 1V @ 108µA
    Gate Charge (Qg) (Max) @ Vgs : 5.7nC @ 5V
    Vgs (Max) : ±20V
    Fampiasana masinina (Ciss) (Max) @ Vds : 108pF @ 25V
    Fihetsika FET : Depletion Mode
    Fandroahana herinaratra (Max) : 1.8W (Ta)
    Ny mari-pana : -55°C ~ 150°C (TJ)
    Type Type : Surface Mount
    Package Fitaovana mpamatsy : PG-SOT223-4
    Famonosana / tranga : TO-261-4, TO-261AA