SI4435FDY-T1-GE3 Vidiny (USD) [610452pcs Stock]
- 1 pcs$0.06059
- Ampahany:
- SI4435FDY-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Famaritana antsipirihany:
- MOSFET P-CH 30V 12.6A 8SOIC.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistors - IGBTs - Modules, Diodes - Miova endrika ny habeny (varicaps, varact, Transistorio - Bipolar (BJT) - Arrays, mialoha ali, Modules maotera mpamily, Transistors - Bipolar (BJT) - Single, Transistors - JFET, Diodes - RF and Diode - Mpitaovana - Arrays ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Vishay Siliconix SI4435FDY-T1-GE3 electronic components. SI4435FDY-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI4435FDY-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI4435FDY-T1-GE3 Toetran'ny vokatra
Ampahany :
SI4435FDY-T1-GE3
Manufacturer :
Vishay Siliconix
Description :
MOSFET P-CH 30V 12.6A 8SOIC
Series :
TrenchFET® Gen III
Ampahany :
Active
Type FET :
P-Channel
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
30V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
12.6A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
19 mOhm @ 9A, 10V
Vgs (th) (Max) @ Id :
2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
42nC @ 10V
Vgs (Max) :
±20V
Fampiasana masinina (Ciss) (Max) @ Vds :
1500pF @ 15V
Fihetsika FET :
-
Fandroahana herinaratra (Max) :
4.8W (Tc)
Ny mari-pana :
-55°C ~ 150°C (TJ)
Type Type :
Surface Mount
Package Fitaovana mpamatsy :
8-SOIC
Famonosana / tranga :
8-SOIC (0.154", 3.90mm Width)
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