[1989pcs Stock]
- Ampahany:
- IRFH7110TR2PBF
- Manufacturer:
- Infineon Technologies
- Famaritana antsipirihany:
- MOSFET N CH 100V 11A PQFN5X6.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Ny thyristors - DIAC, SIDACs, Transistor - Unjunction Programmable, Diodes - Miova endrika ny habeny (varicaps, varact, Transistorio - Bipolar (BJT) - Arrays, Transistors - Bipolar (BJT) - Single, mialoha alik, Transistors - FETs, MOSFETs - Single, Transistorio - Bipolar (BJT) - Arrays, mialoha ali and Diodes - RF ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Infineon Technologies IRFH7110TR2PBF electronic components. IRFH7110TR2PBF can be shipped within 24 hours after order. If you have any demands for IRFH7110TR2PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFH7110TR2PBF Toetran'ny vokatra
Ampahany :
IRFH7110TR2PBF
Manufacturer :
Infineon Technologies
Description :
MOSFET N CH 100V 11A PQFN5X6
Series :
HEXFET®
Ampahany :
Obsolete
Type FET :
N-Channel
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
100V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
11A (Ta), 58A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
13.5 mOhm @ 35A, 10V
Vgs (th) (Max) @ Id :
4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs :
87nC @ 10V
Vgs (Max) :
±20V
Fampiasana masinina (Ciss) (Max) @ Vds :
3240pF @ 25V
Fihetsika FET :
-
Fandroahana herinaratra (Max) :
3.6W (Ta), 104W (Tc)
Ny mari-pana :
-55°C ~ 150°C (TJ)
Type Type :
Surface Mount
Package Fitaovana mpamatsy :
8-PQFN (5x6)
Famonosana / tranga :
8-TQFN Exposed Pad
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