Ampahany :
BSM300D12P2E001
Manufacturer :
Rohm Semiconductor
Description :
MOSFET 2N-CH 1200V 300A
Type FET :
2 N-Channel (Half Bridge)
Fihetsika FET :
Silicon Carbide (SiC)
Drain to Source Voltage (Vdss) :
1200V (1.2kV)
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
300A (Tc)
Rds On (Max) @ Id, Vgs :
-
Vgs (th) (Max) @ Id :
4V @ 68mA
Gate Charge (Qg) (Max) @ Vgs :
-
Fampiasana masinina (Ciss) (Max) @ Vds :
35000pF @ 10V
Ny mari-pana :
-40°C ~ 150°C (TJ)
Type Type :
Chassis Mount
Famonosana / tranga :
Module
Package Fitaovana mpamatsy :
Module