Vishay Semiconductor Diodes Division - US1BHE3_A/I

KEY Part #: K6433806

US1BHE3_A/I Vidiny (USD) [833375pcs Stock]

  • 1 pcs$0.04683
  • 7,500 pcs$0.04660

Ampahany:
US1BHE3_A/I
Manufacturer:
Vishay Semiconductor Diodes Division
Famaritana antsipirihany:
DIODE GEN PURP 100V 1A DO214AC. Rectifiers 100 Volt 1.0A 50ns 30 Amp IFSM
Manufacturer's standard lead time:
Ao amin'ny staoky
Fiainana an-trano:
Iray taona
Chip From:
Hong Kong
RoHS:
Fomba fandoavam-bola:
Fomba fandefasana:
Fianakaviana:
KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistorio - Bipolar (BJT) - Arrays, Transistors - Bipolar (BJT) - Single, Diodes - Mpihazakazaka - Iray, Diodes - Rectifiers Bridge, Transistors - IGBTs - Tafidina, Transistors - JFET, Transistors - FETs, MOSFETs - Single and Ny kristianao - SCR ...
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We specialize in Vishay Semiconductor Diodes Division US1BHE3_A/I electronic components. US1BHE3_A/I can be shipped within 24 hours after order. If you have any demands for US1BHE3_A/I, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

US1BHE3_A/I Toetran'ny vokatra

Ampahany : US1BHE3_A/I
Manufacturer : Vishay Semiconductor Diodes Division
Description : DIODE GEN PURP 100V 1A DO214AC
Series : Automotive, AEC-Q101
Ampahany : Active
Type diode : Standard
Torohevitra - Reverse DC (Vr) (Max) : 100V
Ankehitriny - salanisa antonony (Io) : 1A
Volonta - Mandrosoa (Vf) (Max) @ Raha : 1V @ 1A
Speed : Fast Recovery =< 500ns, > 200mA (Io)
Fotoana Famerenana amin'ny laoniny (trr) : 50ns
Ankehitriny - Reverse Leakage @ Vr : 10µA @ 100V
Capacitance @ Vr, F : 15pF @ 4V, 1MHz
Type Type : Surface Mount
Famonosana / tranga : DO-214AC, SMA
Package Fitaovana mpamatsy : DO-214AC (SMA)
Ny mari-pana tsy miasa - Junction : -55°C ~ 150°C

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