Infineon Technologies - IPD80R900P7ATMA1

KEY Part #: K6403432

IPD80R900P7ATMA1 Vidiny (USD) [144578pcs Stock]

  • 1 pcs$0.25583
  • 2,500 pcs$0.24905

Ampahany:
IPD80R900P7ATMA1
Manufacturer:
Infineon Technologies
Famaritana antsipirihany:
MOSFET N-CH 800V 6A TO252-3.
Manufacturer's standard lead time:
Ao amin'ny staoky
Fiainana an-trano:
Iray taona
Chip From:
Hong Kong
RoHS:
Fomba fandoavam-bola:
Fomba fandefasana:
Fianakaviana:
KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Diode - Zener - Arrays, Diodes - Rectifiers Bridge, Transistors - FET, MOSFET - RF, Transistor - Unjunction Programmable, Transistors - Bipolar (BJT) - Single, Diode - Mpitaovana - Arrays, Diodes - Miova endrika ny habeny (varicaps, varact and Transistorio - Bipolar (BJT) - Arrays, mialoha ali ...
Ny tombony azo amin'ny fifaninanana:
We specialize in Infineon Technologies IPD80R900P7ATMA1 electronic components. IPD80R900P7ATMA1 can be shipped within 24 hours after order. If you have any demands for IPD80R900P7ATMA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPD80R900P7ATMA1 Toetran'ny vokatra

Ampahany : IPD80R900P7ATMA1
Manufacturer : Infineon Technologies
Description : MOSFET N-CH 800V 6A TO252-3
Series : CoolMOS™ P7
Ampahany : Active
Type FET : N-Channel
teknolojia : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 800V
Ankehitriny - Drain mitohy (Id) @ 25 ° C : 6A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 900 mOhm @ 2.2A, 10V
Vgs (th) (Max) @ Id : 3.5V @ 110µA
Gate Charge (Qg) (Max) @ Vgs : 15nC @ 10V
Vgs (Max) : ±20V
Fampiasana masinina (Ciss) (Max) @ Vds : 350pF @ 500V
Fihetsika FET : -
Fandroahana herinaratra (Max) : 45W (Tc)
Ny mari-pana : -55°C ~ 150°C (TJ)
Type Type : Surface Mount
Package Fitaovana mpamatsy : PG-TO252-3
Famonosana / tranga : TO-252-3, DPak (2 Leads + Tab), SC-63