EGL41DHE3_A/I Vidiny (USD) [758794pcs Stock]
- 1 pcs$0.04875
- Ampahany:
- EGL41DHE3_A/I
- Manufacturer:
- Vishay Semiconductor Diodes Division
- Famaritana antsipirihany:
- DIODE GEN PURP 200V 1A DO213AB. Rectifiers 1A,200V,50NS AEC-Q101 Qualified
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistor - FET, MOSFET - Arrays, Diodes - Zener - Iray, Diodes - Rectifiers Bridge, Transistors - JFET, Transistors - Bipolar (BJT) - Single, Ny kristianao - SCR, Diodes - Mpihazakazaka - Iray and Diodes - RF ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Vishay Semiconductor Diodes Division EGL41DHE3_A/I electronic components. EGL41DHE3_A/I can be shipped within 24 hours after order. If you have any demands for EGL41DHE3_A/I, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
EGL41DHE3_A/I Toetran'ny vokatra
Ampahany :
EGL41DHE3_A/I
Manufacturer :
Vishay Semiconductor Diodes Division
Description :
DIODE GEN PURP 200V 1A DO213AB
Series :
Automotive, AEC-Q101, Superectifier®
Ampahany :
Active
Type diode :
Standard
Torohevitra - Reverse DC (Vr) (Max) :
200V
Ankehitriny - salanisa antonony (Io) :
1A
Volonta - Mandrosoa (Vf) (Max) @ Raha :
1V @ 1A
Speed :
Fast Recovery =< 500ns, > 200mA (Io)
Fotoana Famerenana amin'ny laoniny (trr) :
50ns
Ankehitriny - Reverse Leakage @ Vr :
5µA @ 200V
Capacitance @ Vr, F :
20pF @ 4V, 1MHz
Type Type :
Surface Mount
Famonosana / tranga :
DO-213AB, MELF (Glass)
Package Fitaovana mpamatsy :
DO-213AB
Ny mari-pana tsy miasa - Junction :
-65°C ~ 175°C
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