SI7913DN-T1-GE3 Vidiny (USD) [111328pcs Stock]
- 1 pcs$0.33224
- 3,000 pcs$0.31128
- Ampahany:
- SI7913DN-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Famaritana antsipirihany:
- MOSFET 2P-CH 20V 5A PPAK 1212-8.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Diodes - Zener - Iray, Diode - Mpitaovana - Arrays, Transistor - FET, MOSFET - Arrays, Transistors - FET, MOSFET - RF, Diode - Zener - Arrays, Tratrao - SCR - Modules, Diodes - Mpihazakazaka - Iray and Transistor - Tanjona manokana ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Vishay Siliconix SI7913DN-T1-GE3 electronic components. SI7913DN-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI7913DN-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI7913DN-T1-GE3 Toetran'ny vokatra
Ampahany :
SI7913DN-T1-GE3
Manufacturer :
Vishay Siliconix
Description :
MOSFET 2P-CH 20V 5A PPAK 1212-8
Series :
TrenchFET®
Ampahany :
Active
Type FET :
2 P-Channel (Dual)
Fihetsika FET :
Logic Level Gate
Drain to Source Voltage (Vdss) :
20V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
5A
Rds On (Max) @ Id, Vgs :
37 mOhm @ 7.4A, 4.5V
Vgs (th) (Max) @ Id :
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
24nC @ 4.5V
Fampiasana masinina (Ciss) (Max) @ Vds :
-
Hery - Max :
1.3W
Ny mari-pana :
-55°C ~ 150°C (TJ)
Type Type :
Surface Mount
Famonosana / tranga :
PowerPAK® 1212-8 Dual
Package Fitaovana mpamatsy :
PowerPAK® 1212-8 Dual
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