[13211pcs Stock]
- Ampahany:
- FQD2N80TM_WS
- Manufacturer:
- ON Semiconductor
- Famaritana antsipirihany:
- MOSFET N-CH 800V 1.8A DPAK.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistors - FETs, MOSFETs - Single, Tratrao - TRIACs, Diodes - Rectifiers Bridge, Diodes - Zener - Iray, Transistorio - Bipolar (BJT) - Arrays, mialoha ali, Diodes - RF, Ny kristianao - SCR and Transistors - IGBTs - Modules ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in ON Semiconductor FQD2N80TM_WS electronic components. FQD2N80TM_WS can be shipped within 24 hours after order. If you have any demands for FQD2N80TM_WS, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FQD2N80TM_WS Toetran'ny vokatra
Ampahany :
FQD2N80TM_WS
Manufacturer :
ON Semiconductor
Description :
MOSFET N-CH 800V 1.8A DPAK
Series :
QFET®
Ampahany :
Obsolete
Type FET :
N-Channel
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
800V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
1.8A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
6.3 Ohm @ 900mA, 10V
Vgs (th) (Max) @ Id :
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
15nC @ 10V
Vgs (Max) :
±30V
Fampiasana masinina (Ciss) (Max) @ Vds :
550pF @ 25V
Fihetsika FET :
-
Fandroahana herinaratra (Max) :
2.5W (Ta), 50W (Tc)
Ny mari-pana :
-55°C ~ 150°C (TJ)
Type Type :
Surface Mount
Package Fitaovana mpamatsy :
D-Pak
Famonosana / tranga :
TO-252-3, DPak (2 Leads + Tab), SC-63
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