BSZ028N04LSATMA1 Vidiny (USD) [178012pcs Stock]
- 1 pcs$0.20778
- 5,000 pcs$0.19644
- Ampahany:
- BSZ028N04LSATMA1
- Manufacturer:
- Infineon Technologies
- Famaritana antsipirihany:
- MOSFET N-CH 40V 21A 8TSDSON.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistors - Bipolar (BJT) - Single, mialoha alik, Transistorio - Bipolar (BJT) - Arrays, Transistors - IGBTs - Tafidina, Transistors - IGBTs - Modules, Diodes - RF, Diode - Zener - Arrays, Transistors - JFET and Diodes - Rectifiers Bridge ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Infineon Technologies BSZ028N04LSATMA1 electronic components. BSZ028N04LSATMA1 can be shipped within 24 hours after order. If you have any demands for BSZ028N04LSATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSZ028N04LSATMA1 Toetran'ny vokatra
Ampahany :
BSZ028N04LSATMA1
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 40V 21A 8TSDSON
Series :
OptiMOS™
Ampahany :
Active
Type FET :
N-Channel
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
40V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
21A (Ta), 40A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
2.8 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id :
-
Gate Charge (Qg) (Max) @ Vgs :
32nC @ 10V
Vgs (Max) :
±20V
Fampiasana masinina (Ciss) (Max) @ Vds :
2300pF @ 20V
Fihetsika FET :
-
Fandroahana herinaratra (Max) :
2.1W (Ta), 63W (Tc)
Ny mari-pana :
-55°C ~ 150°C (TJ)
Type Type :
Surface Mount
Package Fitaovana mpamatsy :
PG-TSDSON-8-FL
Famonosana / tranga :
8-PowerTDFN
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