Vishay Siliconix - SIHB24N65E-E3

KEY Part #: K6417220

SIHB24N65E-E3 Vidiny (USD) [26771pcs Stock]

  • 1 pcs$2.89099
  • 10 pcs$2.58162
  • 100 pcs$2.11677
  • 500 pcs$1.71405
  • 1,000 pcs$1.44558

Ampahany:
SIHB24N65E-E3
Manufacturer:
Vishay Siliconix
Famaritana antsipirihany:
MOSFET N-CH 650V 24A D2PAK.
Manufacturer's standard lead time:
Ao amin'ny staoky
Fiainana an-trano:
Iray taona
Chip From:
Hong Kong
RoHS:
Fomba fandoavam-bola:
Fomba fandefasana:
Fianakaviana:
KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Diodes - Miova endrika ny habeny (varicaps, varact, Diodes - Mpihazakazaka - Iray, Diode - Mpitaovana - Arrays, Transistorio - Bipolar (BJT) - Arrays, mialoha ali, Diodes - RF, Transistors - Bipolar (BJT) - Single, Ny thyristors - DIAC, SIDACs and Transistorio - Bipolar (BJT) - Arrays ...
Ny tombony azo amin'ny fifaninanana:
We specialize in Vishay Siliconix SIHB24N65E-E3 electronic components. SIHB24N65E-E3 can be shipped within 24 hours after order. If you have any demands for SIHB24N65E-E3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SIHB24N65E-E3 Toetran'ny vokatra

Ampahany : SIHB24N65E-E3
Manufacturer : Vishay Siliconix
Description : MOSFET N-CH 650V 24A D2PAK
Series : -
Ampahany : Active
Type FET : N-Channel
teknolojia : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 650V
Ankehitriny - Drain mitohy (Id) @ 25 ° C : 24A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 145 mOhm @ 12A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 122nC @ 10V
Vgs (Max) : ±30V
Fampiasana masinina (Ciss) (Max) @ Vds : 2740pF @ 100V
Fihetsika FET : -
Fandroahana herinaratra (Max) : 250W (Tc)
Ny mari-pana : -55°C ~ 150°C (TJ)
Type Type : Surface Mount
Package Fitaovana mpamatsy : D2PAK
Famonosana / tranga : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB