FQU2N60CTU Vidiny (USD) [85018pcs Stock]
- 1 pcs$0.32036
- 10 pcs$0.28001
- 100 pcs$0.21614
- 500 pcs$0.16010
- 1,000 pcs$0.12808
- Ampahany:
- FQU2N60CTU
- Manufacturer:
- ON Semiconductor
- Famaritana antsipirihany:
- MOSFET N-CH 600V 1.9A IPAK.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistors - Bipolar (BJT) - Single, Transistors - FET, MOSFET - RF, Diodes - Zener - Iray, Transistors - IGBTs - Tafidina, Ny thyristors - DIAC, SIDACs, Diodes - RF, Diode - Zener - Arrays and Ny kristianao - SCR ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in ON Semiconductor FQU2N60CTU electronic components. FQU2N60CTU can be shipped within 24 hours after order. If you have any demands for FQU2N60CTU, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FQU2N60CTU Toetran'ny vokatra
Ampahany :
FQU2N60CTU
Manufacturer :
ON Semiconductor
Description :
MOSFET N-CH 600V 1.9A IPAK
Series :
QFET®
Ampahany :
Active
Type FET :
N-Channel
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
600V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
1.9A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
4.7 Ohm @ 950mA, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
12nC @ 10V
Vgs (Max) :
±30V
Fampiasana masinina (Ciss) (Max) @ Vds :
235pF @ 25V
Fihetsika FET :
-
Fandroahana herinaratra (Max) :
2.5W (Ta), 44W (Tc)
Ny mari-pana :
-55°C ~ 150°C (TJ)
Type Type :
Through Hole
Package Fitaovana mpamatsy :
I-PAK
Famonosana / tranga :
TO-251-3 Short Leads, IPak, TO-251AA
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