ES3DBHM4G Vidiny (USD) [501481pcs Stock]
- 1 pcs$0.07376
- Ampahany:
- ES3DBHM4G
- Manufacturer:
- Taiwan Semiconductor Corporation
- Famaritana antsipirihany:
- DIODE GEN PURP 200V 3A DO214AA.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistors - IGBTs - Tafidina, Diodes - Zener - Iray, Transistors - Bipolar (BJT) - Single, Ny thyristors - DIAC, SIDACs, Transistors - IGBTs - Modules, Transistor - Tanjona manokana, Diodes - Miova endrika ny habeny (varicaps, varact and Transistor - Unjunction Programmable ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Taiwan Semiconductor Corporation ES3DBHM4G electronic components. ES3DBHM4G can be shipped within 24 hours after order. If you have any demands for ES3DBHM4G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
ES3DBHM4G Toetran'ny vokatra
Ampahany :
ES3DBHM4G
Manufacturer :
Taiwan Semiconductor Corporation
Description :
DIODE GEN PURP 200V 3A DO214AA
Series :
Automotive, AEC-Q101
Ampahany :
Active
Type diode :
Standard
Torohevitra - Reverse DC (Vr) (Max) :
200V
Ankehitriny - salanisa antonony (Io) :
3A
Volonta - Mandrosoa (Vf) (Max) @ Raha :
1V @ 3A
Speed :
Fast Recovery =< 500ns, > 200mA (Io)
Fotoana Famerenana amin'ny laoniny (trr) :
35ns
Ankehitriny - Reverse Leakage @ Vr :
10µA @ 200V
Capacitance @ Vr, F :
46pF @ 4V, 1MHz
Type Type :
Surface Mount
Famonosana / tranga :
DO-214AA, SMB
Package Fitaovana mpamatsy :
DO-214AA (SMB)
Ny mari-pana tsy miasa - Junction :
-55°C ~ 150°C
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