IPP072N10N3GXKSA1 Vidiny (USD) [43295pcs Stock]
- 1 pcs$0.76930
- 10 pcs$0.69572
- 100 pcs$0.55887
- 500 pcs$0.43470
- 1,000 pcs$0.34071
- Ampahany:
- IPP072N10N3GXKSA1
- Manufacturer:
- Infineon Technologies
- Famaritana antsipirihany:
- MOSFET N-CH 100V 80A TO220-3.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Diodes - Mpihazakazaka - Iray, Transistors - FET, MOSFET - RF, Transistors - Bipolar (BJT) - Single, mialoha alik, Transistorio - Bipolar (BJT) - Arrays, Tratrao - SCR - Modules, Transistors - IGBTs - Modules, Transistorio - Bipolar (BJT) - Arrays, mialoha ali and Diodes - Rectifiers Bridge ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Infineon Technologies IPP072N10N3GXKSA1 electronic components. IPP072N10N3GXKSA1 can be shipped within 24 hours after order. If you have any demands for IPP072N10N3GXKSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPP072N10N3GXKSA1 Toetran'ny vokatra
Ampahany :
IPP072N10N3GXKSA1
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 100V 80A TO220-3
Series :
OptiMOS™
Ampahany :
Active
Type FET :
N-Channel
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
100V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
80A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) :
6V, 10V
Rds On (Max) @ Id, Vgs :
7.2 mOhm @ 80A, 10V
Vgs (th) (Max) @ Id :
3.5V @ 90µA
Gate Charge (Qg) (Max) @ Vgs :
68nC @ 10V
Vgs (Max) :
±20V
Fampiasana masinina (Ciss) (Max) @ Vds :
4910pF @ 50V
Fihetsika FET :
-
Fandroahana herinaratra (Max) :
150W (Tc)
Ny mari-pana :
-55°C ~ 175°C (TJ)
Type Type :
Through Hole
Package Fitaovana mpamatsy :
PG-TO220-3
Famonosana / tranga :
TO-220-3
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