Toshiba Memory America, Inc. - TH58BYG2S3HBAI6

KEY Part #: K937444

TH58BYG2S3HBAI6 Vidiny (USD) [16879pcs Stock]

  • 1 pcs$2.25638
  • 10 pcs$2.04661
  • 25 pcs$2.00236
  • 50 pcs$1.99126

Ampahany:
TH58BYG2S3HBAI6
Manufacturer:
Toshiba Memory America, Inc.
Famaritana antsipirihany:
IC FLASH 4G PARALLEL 67VFBGA. NAND Flash 1.8V 4Gb 24nm SLC NAND (EEPROM)
Manufacturer's standard lead time:
Ao amin'ny staoky
Fiainana an-trano:
Iray taona
Chip From:
Hong Kong
RoHS:
Fomba fandoavam-bola:
Fomba fandefasana:
Fianakaviana:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TH58BYG2S3HBAI6 Toetran'ny vokatra

Ampahany : TH58BYG2S3HBAI6
Manufacturer : Toshiba Memory America, Inc.
Description : IC FLASH 4G PARALLEL 67VFBGA
Series : Benand™
Ampahany : Active
Karazana fitadidiana : Non-Volatile
Format fahatsiarovana : FLASH
teknolojia : FLASH - NAND (SLC)
Haben'ny fahatsiarovana : 4Gb (512M x 8)
Dingana famantaranandro : -
Soraty ny ora mihetsika - Teny, pejy : 25ns
Fotoana fidirana : 25ns
Fampitana fahatsiarovana : Parallel
Volonta - Famatsiana : 1.7V ~ 1.95V
Ny mari-pana : -40°C ~ 85°C (TA)
Type Type : Surface Mount
Famonosana / tranga : 67-VFBGA
Package Fitaovana mpamatsy : 67-VFBGA (6.5x8)

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