NSB8JTHE3_A/I Vidiny (USD) [104538pcs Stock]
- 1 pcs$0.37403
- 800 pcs$0.33139
- Ampahany:
- NSB8JTHE3_A/I
- Manufacturer:
- Vishay Semiconductor Diodes Division
- Famaritana antsipirihany:
- DIODE GEN PURP 600V 8A TO263AB. Rectifiers 8A 600V Glass Psvtd AEC-Q101 Qualified
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistors - FET, MOSFET - RF, Diode - Mpitaovana - Arrays, Transistors - Bipolar (BJT) - Single, Transistors - IGBTs - Modules, Transistors - IGBTs - Tafidina, Diodes - Zener - Iray, Modules maotera mpamily and Ny thyristors - DIAC, SIDACs ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Vishay Semiconductor Diodes Division NSB8JTHE3_A/I electronic components. NSB8JTHE3_A/I can be shipped within 24 hours after order. If you have any demands for NSB8JTHE3_A/I, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
NSB8JTHE3_A/I Toetran'ny vokatra
Ampahany :
NSB8JTHE3_A/I
Manufacturer :
Vishay Semiconductor Diodes Division
Description :
DIODE GEN PURP 600V 8A TO263AB
Series :
Automotive, AEC-Q101
Ampahany :
Active
Type diode :
Standard
Torohevitra - Reverse DC (Vr) (Max) :
600V
Ankehitriny - salanisa antonony (Io) :
8A
Volonta - Mandrosoa (Vf) (Max) @ Raha :
1.1V @ 8A
Speed :
Standard Recovery >500ns, > 200mA (Io)
Fotoana Famerenana amin'ny laoniny (trr) :
-
Ankehitriny - Reverse Leakage @ Vr :
10µA @ 600V
Capacitance @ Vr, F :
55pF @ 4V, 1MHz
Type Type :
Surface Mount
Famonosana / tranga :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Package Fitaovana mpamatsy :
TO-263AB
Ny mari-pana tsy miasa - Junction :
-55°C ~ 150°C
Vaovao farany
Mety ho liana koa ianao
-
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-
S1FLG-GS08
Vishay Semiconductor Diodes Division
DIODE GP 400V 700MA DO219AB. Rectifiers GENPURP SWITCHING DIODESMFDO219ECO-e3
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