SCTW90N65G2V Vidiny (USD) [1553pcs Stock]
- 1 pcs$27.86749
- Ampahany:
- SCTW90N65G2V
- Manufacturer:
- STMicroelectronics
- Famaritana antsipirihany:
- SILICON CARBIDE POWER MOSFET 650.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistors - FET, MOSFET - RF, Transistorio - Bipolar (BJT) - Arrays, Tratrao - SCR - Modules, Transistor - Unjunction Programmable, Transistors - IGBTs - Tafidina, Diodes - RF, Diodes - Miova endrika ny habeny (varicaps, varact and Transistors - FETs, MOSFETs - Single ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in STMicroelectronics SCTW90N65G2V electronic components. SCTW90N65G2V can be shipped within 24 hours after order. If you have any demands for SCTW90N65G2V, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SCTW90N65G2V Toetran'ny vokatra
Ampahany :
SCTW90N65G2V
Manufacturer :
STMicroelectronics
Description :
SILICON CARBIDE POWER MOSFET 650
Series :
-
Ampahany :
Active
Type FET :
N-Channel
teknolojia :
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) :
650V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
90A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) :
18V
Rds On (Max) @ Id, Vgs :
25 mOhm @ 50A, 18V
Vgs (th) (Max) @ Id :
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
157nC @ 18V
Vgs (Max) :
+22V, -10V
Fampiasana masinina (Ciss) (Max) @ Vds :
3300pF @ 400V
Fihetsika FET :
-
Fandroahana herinaratra (Max) :
390W (Tc)
Ny mari-pana :
-55°C ~ 200°C (TJ)
Type Type :
Through Hole
Package Fitaovana mpamatsy :
HiP247™
Famonosana / tranga :
TO-247-3
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