Vishay Siliconix - SI1032X-T1-GE3

KEY Part #: K6396485

SI1032X-T1-GE3 Vidiny (USD) [610452pcs Stock]

  • 1 pcs$0.06059
  • 3,000 pcs$0.05168

Ampahany:
SI1032X-T1-GE3
Manufacturer:
Vishay Siliconix
Famaritana antsipirihany:
MOSFET N-CH 20V 200MA SC89-3.
Manufacturer's standard lead time:
Ao amin'ny staoky
Fiainana an-trano:
Iray taona
Chip From:
Hong Kong
RoHS:
Fomba fandoavam-bola:
Fomba fandefasana:
Fianakaviana:
KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistorio - Bipolar (BJT) - Arrays, mialoha ali, Ny kristianao - SCR, Tratrao - TRIACs, Transistors - IGBTs - Modules, Diode - Mpitaovana - Arrays, Transistorio - Bipolar (BJT) - Arrays, Transistors - Bipolar (BJT) - RF and Transistors - Bipolar (BJT) - Single, mialoha alik ...
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We specialize in Vishay Siliconix SI1032X-T1-GE3 electronic components. SI1032X-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI1032X-T1-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SI1032X-T1-GE3 Toetran'ny vokatra

Ampahany : SI1032X-T1-GE3
Manufacturer : Vishay Siliconix
Description : MOSFET N-CH 20V 200MA SC89-3
Series : TrenchFET®
Ampahany : Active
Type FET : N-Channel
teknolojia : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 20V
Ankehitriny - Drain mitohy (Id) @ 25 ° C : 200mA (Ta)
Fandefasana fiara (Max Rds On, Min Rds On) : 1.5V, 4.5V
Rds On (Max) @ Id, Vgs : 5 Ohm @ 200mA, 4.5V
Vgs (th) (Max) @ Id : 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 0.75nC @ 4.5V
Vgs (Max) : ±6V
Fampiasana masinina (Ciss) (Max) @ Vds : -
Fihetsika FET : -
Fandroahana herinaratra (Max) : 300mW (Ta)
Ny mari-pana : -55°C ~ 150°C (TJ)
Type Type : Surface Mount
Package Fitaovana mpamatsy : SC-89-3
Famonosana / tranga : SC-89, SOT-490