SIHB35N60E-GE3 Vidiny (USD) [13208pcs Stock]
- 1 pcs$3.12016
- 10 pcs$2.78743
- 100 pcs$2.28569
- 500 pcs$1.85085
- 1,000 pcs$1.56096
- Ampahany:
- SIHB35N60E-GE3
- Manufacturer:
- Vishay Siliconix
- Famaritana antsipirihany:
- MOSFET N-CH 600V 32A D2PAK TO263.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Modules maotera mpamily, Transistor - FET, MOSFET - Arrays, Diodes - Zener - Iray, Transistorio - Bipolar (BJT) - Arrays, Transistors - IGBTs - Modules, Transistors - Bipolar (BJT) - RF, Transistors - FET, MOSFET - RF and Transistors - IGBTs - tokan-tena ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Vishay Siliconix SIHB35N60E-GE3 electronic components. SIHB35N60E-GE3 can be shipped within 24 hours after order. If you have any demands for SIHB35N60E-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIHB35N60E-GE3 Toetran'ny vokatra
Ampahany :
SIHB35N60E-GE3
Manufacturer :
Vishay Siliconix
Description :
MOSFET N-CH 600V 32A D2PAK TO263
Series :
-
Ampahany :
Active
Type FET :
N-Channel
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
650V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
32A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
94 mOhm @ 17A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
132nC @ 10V
Vgs (Max) :
±30V
Fampiasana masinina (Ciss) (Max) @ Vds :
2760pF @ 100V
Fihetsika FET :
-
Fandroahana herinaratra (Max) :
250W (Tc)
Ny mari-pana :
-55°C ~ 150°C (TJ)
Type Type :
Surface Mount
Package Fitaovana mpamatsy :
D²PAK (TO-263)
Famonosana / tranga :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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