SI8497DB-T2-E1 Vidiny (USD) [404783pcs Stock]
- 1 pcs$0.09138
- 3,000 pcs$0.08631
- Ampahany:
- SI8497DB-T2-E1
- Manufacturer:
- Vishay Siliconix
- Famaritana antsipirihany:
- MOSFET P-CH 30V 13A MICROFOOT.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistorio - Bipolar (BJT) - Arrays, Diodes - RF, Transistors - IGBTs - tokan-tena, Tratrao - SCR - Modules, Diodes - Rectifiers Bridge, Transistors - FETs, MOSFETs - Single, Tratrao - TRIACs and Diode - Zener - Arrays ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Vishay Siliconix SI8497DB-T2-E1 electronic components. SI8497DB-T2-E1 can be shipped within 24 hours after order. If you have any demands for SI8497DB-T2-E1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI8497DB-T2-E1 Toetran'ny vokatra
Ampahany :
SI8497DB-T2-E1
Manufacturer :
Vishay Siliconix
Description :
MOSFET P-CH 30V 13A MICROFOOT
Series :
TrenchFET®
Ampahany :
Active
Type FET :
P-Channel
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
30V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
13A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) :
2V, 4.5V
Rds On (Max) @ Id, Vgs :
53 mOhm @ 1.5A, 4.5V
Vgs (th) (Max) @ Id :
1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
49nC @ 10V
Vgs (Max) :
±12V
Fampiasana masinina (Ciss) (Max) @ Vds :
1320pF @ 15V
Fihetsika FET :
-
Fandroahana herinaratra (Max) :
2.77W (Ta), 13W (Tc)
Ny mari-pana :
-55°C ~ 150°C (TJ)
Type Type :
Surface Mount
Package Fitaovana mpamatsy :
6-microfoot
Famonosana / tranga :
6-UFBGA
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