Vishay Siliconix - SQD100N03-3M2L_GE3

KEY Part #: K6419460

SQD100N03-3M2L_GE3 Vidiny (USD) [113348pcs Stock]

  • 1 pcs$0.32632

Ampahany:
SQD100N03-3M2L_GE3
Manufacturer:
Vishay Siliconix
Famaritana antsipirihany:
MOSFET N-CH 30V 100A TO252AA.
Manufacturer's standard lead time:
Ao amin'ny staoky
Fiainana an-trano:
Iray taona
Chip From:
Hong Kong
RoHS:
Fomba fandoavam-bola:
Fomba fandefasana:
Fianakaviana:
KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistors - Bipolar (BJT) - Single, Transistor - Tanjona manokana, Transistorio - Bipolar (BJT) - Arrays, Diodes - Zener - Iray, Ny kristianao - SCR, Diodes - Miova endrika ny habeny (varicaps, varact, Transistors - Bipolar (BJT) - Single, mialoha alik and Diodes - Mpihazakazaka - Iray ...
Ny tombony azo amin'ny fifaninanana:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SQD100N03-3M2L_GE3 Toetran'ny vokatra

Ampahany : SQD100N03-3M2L_GE3
Manufacturer : Vishay Siliconix
Description : MOSFET N-CH 30V 100A TO252AA
Series : Automotive, AEC-Q101, TrenchFET®
Ampahany : Active
Type FET : N-Channel
teknolojia : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Ankehitriny - Drain mitohy (Id) @ 25 ° C : 100A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 3.2 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id : 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 116nC @ 10V
Vgs (Max) : ±20V
Fampiasana masinina (Ciss) (Max) @ Vds : 6316pF @ 15V
Fihetsika FET : -
Fandroahana herinaratra (Max) : 136W (Tc)
Ny mari-pana : -55°C ~ 175°C (TJ)
Type Type : Surface Mount
Package Fitaovana mpamatsy : TO-252AA
Famonosana / tranga : TO-252-3, DPak (2 Leads + Tab), SC-63