Lite-On Inc. - 6N137S-TA1

KEY Part #: K7359516

6N137S-TA1 Vidiny (USD) [329881pcs Stock]

  • 1 pcs$0.11268
  • 1,000 pcs$0.11212
  • 2,000 pcs$0.10465
  • 5,000 pcs$0.10091
  • 10,000 pcs$0.09942
  • 25,000 pcs$0.09717

Ampahany:
6N137S-TA1
Manufacturer:
Lite-On Inc.
Famaritana antsipirihany:
OPTOISO 5KV 1CH OPEN COLL 8SMD. High Speed Optocouplers High Speed 10MBd LogicGate Output
Manufacturer's standard lead time:
Ao amin'ny staoky
Fiainana an-trano:
Iray taona
Chip From:
Hong Kong
RoHS:
Fomba fandoavam-bola:
Fomba fandefasana:
Fianakaviana:
KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Optoisolators - Triac, Output SCR, Tanjona manokana, Optoisolators - Transistor, Output Photovoltaic, Isolator - mpamily vavahady, Isolators nomerika and Optoisolator - Votoatin'ny lojika ...
Ny tombony azo amin'ny fifaninanana:
We specialize in Lite-On Inc. 6N137S-TA1 electronic components. 6N137S-TA1 can be shipped within 24 hours after order. If you have any demands for 6N137S-TA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

6N137S-TA1 Toetran'ny vokatra

Ampahany : 6N137S-TA1
Manufacturer : Lite-On Inc.
Description : OPTOISO 5KV 1CH OPEN COLL 8SMD
Series : -
Ampahany : Active
Isan'ny marika : 1
Inputs - Side 1 / Side 2 : 1/0
Volonta - mitokana : 5000Vrms
Fandraisana an-tsokosoko matetika (Min) : 10kV/µs
Karazana fidirana : DC
Type output : Open Collector
Ankehitriny - Output / Channel : 50mA
Data : 15MBd
Famaranana ny fampiatoana ny tpLH / tpHL (Max) : 75ns, 75ns
Mitsangona / Fotoam-pirodanana (typ) : 22ns, 6.9ns
Volonta - Mandroso (Vf) : 1.38V
Ankehitriny - DC Mivoatra (Raha) (Max) : 20mA
Volonta - Famatsiana : 7V
Ny mari-pana : -40°C ~ 85°C
Type Type : Surface Mount
Famonosana / tranga : 8-SMD, Gull Wing
Package Fitaovana mpamatsy : 8-SMD
Mety ho liana koa ianao
  • K4A4G085WE-BIRC

    Samsung Semiconductor

    4 Gb 512M x 8 2400 Mbps 1.2 V -40 ~ 95 °C 78FBGA.

  • K4ABG165WA-MCWE

    Samsung Semiconductor

    32 Gb 2G x 16 3200 Mbps 1.2 V 0 ~ 85 °C 96FBGA Sample.

  • K4A4G085WE-BITD

    Samsung Semiconductor

    4 Gb 512M x 8 2666 Mbps 1.2 V -40 ~ 95 °C 78FBGA Mass Production.

  • K4A4G085WF-BCTD

    Samsung Semiconductor

    4 Gb 512M x 8 2666 Mbps 1.2 V 0 ~ 85 °C 78FBGA Mass Production.

  • K4A4G085WF-BITD

    Samsung Semiconductor

    4 Gb 512M x 8 2666 Mbps 1.2 V -40 ~ 95 °C 78FBGA Sample.

  • K4A4G165WE-BCWE

    Samsung Semiconductor

    4 Gb 256M x 16 3200 Mbps 1.2 V 0 ~ 85 °C 96FBGA Mass Production.