Infineon Technologies - IPP60R080P7XKSA1

KEY Part #: K6416521

IPP60R080P7XKSA1 Vidiny (USD) [14820pcs Stock]

  • 1 pcs$2.79404
  • 10 pcs$2.49524
  • 100 pcs$2.04617
  • 500 pcs$1.65692
  • 1,000 pcs$1.39740

Ampahany:
IPP60R080P7XKSA1
Manufacturer:
Infineon Technologies
Famaritana antsipirihany:
MOSFET N-CH 600V 37A TO220-3.
Manufacturer's standard lead time:
Ao amin'ny staoky
Fiainana an-trano:
Iray taona
Chip From:
Hong Kong
RoHS:
Fomba fandoavam-bola:
Fomba fandefasana:
Fianakaviana:
KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistors - JFET, Transistorio - Bipolar (BJT) - Arrays, Diodes - RF, Transistor - Unjunction Programmable, Ny kristianao - SCR, Transistors - FET, MOSFET - RF, Transistors - IGBTs - Tafidina and Transistors - IGBTs - tokan-tena ...
Ny tombony azo amin'ny fifaninanana:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPP60R080P7XKSA1 Toetran'ny vokatra

Ampahany : IPP60R080P7XKSA1
Manufacturer : Infineon Technologies
Description : MOSFET N-CH 600V 37A TO220-3
Series : CoolMOS™ P7
Ampahany : Active
Type FET : N-Channel
teknolojia : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 600V
Ankehitriny - Drain mitohy (Id) @ 25 ° C : 37A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 80 mOhm @ 11.8A, 10V
Vgs (th) (Max) @ Id : 4V @ 590µA
Gate Charge (Qg) (Max) @ Vgs : 51nC @ 10V
Vgs (Max) : ±20V
Fampiasana masinina (Ciss) (Max) @ Vds : 2180pF @ 400V
Fihetsika FET : -
Fandroahana herinaratra (Max) : 129W (Tc)
Ny mari-pana : -55°C ~ 150°C (TJ)
Type Type : Through Hole
Package Fitaovana mpamatsy : PG-TO220-3
Famonosana / tranga : TO-220-3

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