Manufacturer :
Rohm Semiconductor
Description :
MOSFET N-CH 1200V 10A TO-247
teknolojia :
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) :
1200V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
10A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) :
18V
Rds On (Max) @ Id, Vgs :
585 mOhm @ 3A, 18V
Vgs (th) (Max) @ Id :
4V @ 900µA
Gate Charge (Qg) (Max) @ Vgs :
27nC @ 18V
Fampiasana masinina (Ciss) (Max) @ Vds :
463pF @ 800V
Fandroahana herinaratra (Max) :
85W (Tc)
Ny mari-pana :
175°C (TJ)
Package Fitaovana mpamatsy :
TO-247
Famonosana / tranga :
TO-247-3