Vishay Siliconix - SQM120N04-1M9_GE3

KEY Part #: K6418067

SQM120N04-1M9_GE3 Vidiny (USD) [51012pcs Stock]

  • 1 pcs$0.76651
  • 800 pcs$0.68986

Ampahany:
SQM120N04-1M9_GE3
Manufacturer:
Vishay Siliconix
Famaritana antsipirihany:
MOSFET N-CH 40V 120A TO263.
Manufacturer's standard lead time:
Ao amin'ny staoky
Fiainana an-trano:
Iray taona
Chip From:
Hong Kong
RoHS:
Fomba fandoavam-bola:
Fomba fandefasana:
Fianakaviana:
KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistorio - Bipolar (BJT) - Arrays, mialoha ali, Diodes - RF, Tratrao - TRIACs, Modules maotera mpamily, Transistors - Bipolar (BJT) - Single, mialoha alik, Transistor - FET, MOSFET - Arrays, Ny kristianao - SCR and Transistorio - Bipolar (BJT) - Arrays ...
Ny tombony azo amin'ny fifaninanana:
We specialize in Vishay Siliconix SQM120N04-1M9_GE3 electronic components. SQM120N04-1M9_GE3 can be shipped within 24 hours after order. If you have any demands for SQM120N04-1M9_GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SQM120N04-1M9_GE3 Toetran'ny vokatra

Ampahany : SQM120N04-1M9_GE3
Manufacturer : Vishay Siliconix
Description : MOSFET N-CH 40V 120A TO263
Series : TrenchFET®
Ampahany : Active
Type FET : N-Channel
teknolojia : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 40V
Ankehitriny - Drain mitohy (Id) @ 25 ° C : 120A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 1.9 mOhm @ 30A, 10V
Vgs (th) (Max) @ Id : 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 270nC @ 10V
Vgs (Max) : ±20V
Fampiasana masinina (Ciss) (Max) @ Vds : 8790pF @ 25V
Fihetsika FET : -
Fandroahana herinaratra (Max) : 300W (Tc)
Ny mari-pana : -55°C ~ 175°C (TJ)
Type Type : Surface Mount
Package Fitaovana mpamatsy : TO-263 (D2Pak)
Famonosana / tranga : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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