1N5809US Vidiny (USD) [8275pcs Stock]
- 1 pcs$4.97550
- 10 pcs$4.47707
- 25 pcs$4.07894
- 100 pcs$3.68108
- 250 pcs$3.38260
- 500 pcs$3.08413
- Ampahany:
- 1N5809US
- Manufacturer:
- Microsemi Corporation
- Famaritana antsipirihany:
- DIODE GEN PURP 100V 3A B-MELF. Rectifiers Rectifier
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Modules maotera mpamily, Diodes - Rectifiers Bridge, Transistors - FET, MOSFET - RF, Transistors - Bipolar (BJT) - Single, mialoha alik, Transistors - Bipolar (BJT) - Single, Transistorio - Bipolar (BJT) - Arrays, Transistor - FET, MOSFET - Arrays and Diodes - Miova endrika ny habeny (varicaps, varact ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Microsemi Corporation 1N5809US electronic components. 1N5809US can be shipped within 24 hours after order. If you have any demands for 1N5809US, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
1N5809US Toetran'ny vokatra
Ampahany :
1N5809US
Manufacturer :
Microsemi Corporation
Description :
DIODE GEN PURP 100V 3A B-MELF
Series :
-
Ampahany :
Active
Type diode :
Standard
Torohevitra - Reverse DC (Vr) (Max) :
100V
Ankehitriny - salanisa antonony (Io) :
3A
Volonta - Mandrosoa (Vf) (Max) @ Raha :
875mV @ 4A
Speed :
Fast Recovery =< 500ns, > 200mA (Io)
Fotoana Famerenana amin'ny laoniny (trr) :
30ns
Ankehitriny - Reverse Leakage @ Vr :
5µA @ 100V
Capacitance @ Vr, F :
60pF @ 10V, 1MHz
Type Type :
Surface Mount
Famonosana / tranga :
SQ-MELF, B
Package Fitaovana mpamatsy :
B, SQ-MELF
Ny mari-pana tsy miasa - Junction :
-65°C ~ 175°C
Vaovao farany
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-
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