NDD60N900U1-1G Vidiny (USD) [2729pcs Stock]
- 825 pcs$0.26309
- Ampahany:
- NDD60N900U1-1G
- Manufacturer:
- ON Semiconductor
- Famaritana antsipirihany:
- MOSFET N-CH 600V 5.9A IPAK-4.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistors - IGBTs - tokan-tena, Diode - Mpitaovana - Arrays, Tratrao - TRIACs, Diode - Zener - Arrays, Diodes - RF, Transistors - Bipolar (BJT) - RF, Tratrao - SCR - Modules and Diodes - Miova endrika ny habeny (varicaps, varact ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in ON Semiconductor NDD60N900U1-1G electronic components. NDD60N900U1-1G can be shipped within 24 hours after order. If you have any demands for NDD60N900U1-1G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
NDD60N900U1-1G Toetran'ny vokatra
Ampahany :
NDD60N900U1-1G
Manufacturer :
ON Semiconductor
Description :
MOSFET N-CH 600V 5.9A IPAK-4
Series :
-
Ampahany :
Obsolete
Type FET :
N-Channel
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
600V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
5.7A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
900 mOhm @ 2.5A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
12nC @ 10V
Vgs (Max) :
±25V
Fampiasana masinina (Ciss) (Max) @ Vds :
360pF @ 50V
Fihetsika FET :
-
Fandroahana herinaratra (Max) :
74W (Tc)
Ny mari-pana :
-55°C ~ 150°C (TJ)
Type Type :
Through Hole
Package Fitaovana mpamatsy :
I-PAK
Famonosana / tranga :
TO-251-3 Short Leads, IPak, TO-251AA
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