Description :
MOSFET 4N-CH 200V 10A 12SIP
Fihetsika FET :
Logic Level Gate
Drain to Source Voltage (Vdss) :
200V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
10A
Rds On (Max) @ Id, Vgs :
175 mOhm @ 5A, 10V
Vgs (th) (Max) @ Id :
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
-
Fampiasana masinina (Ciss) (Max) @ Vds :
850pF @ 10V
Ny mari-pana :
150°C (TJ)
Famonosana / tranga :
12-SIP
Package Fitaovana mpamatsy :
12-SIP w/fin