PSMN4R3-80ES,127 Vidiny (USD) [67219pcs Stock]
- 1 pcs$1.46312
- 10 pcs$1.32078
- 100 pcs$1.00674
- 500 pcs$0.78303
- 1,000 pcs$0.64880
- Ampahany:
- PSMN4R3-80ES,127
- Manufacturer:
- Nexperia USA Inc.
- Famaritana antsipirihany:
- MOSFET N-CH 80V 120A I2PAK.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistors - Bipolar (BJT) - RF, Diode - Mpitaovana - Arrays, Transistorio - Bipolar (BJT) - Arrays, mialoha ali, Transistors - IGBTs - tokan-tena, Transistor - Unjunction Programmable, Diodes - Mpihazakazaka - Iray, Diodes - Miova endrika ny habeny (varicaps, varact and Transistors - FET, MOSFET - RF ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Nexperia USA Inc. PSMN4R3-80ES,127 electronic components. PSMN4R3-80ES,127 can be shipped within 24 hours after order. If you have any demands for PSMN4R3-80ES,127, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PSMN4R3-80ES,127 Toetran'ny vokatra
Ampahany :
PSMN4R3-80ES,127
Manufacturer :
Nexperia USA Inc.
Description :
MOSFET N-CH 80V 120A I2PAK
Series :
-
Ampahany :
Active
Type FET :
N-Channel
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
80V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
120A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
4.3 mOhm @ 25A, 10V
Vgs (th) (Max) @ Id :
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
111nC @ 10V
Vgs (Max) :
±20V
Fampiasana masinina (Ciss) (Max) @ Vds :
8161pF @ 40V
Fihetsika FET :
-
Fandroahana herinaratra (Max) :
306W (Tc)
Ny mari-pana :
-55°C ~ 175°C (TJ)
Type Type :
Through Hole
Package Fitaovana mpamatsy :
I2PAK
Famonosana / tranga :
TO-262-3 Long Leads, I²Pak, TO-262AA
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