Nexperia USA Inc. - PSMN4R3-80ES,127

KEY Part #: K6418519

PSMN4R3-80ES,127 Vidiny (USD) [67219pcs Stock]

  • 1 pcs$1.46312
  • 10 pcs$1.32078
  • 100 pcs$1.00674
  • 500 pcs$0.78303
  • 1,000 pcs$0.64880

Ampahany:
PSMN4R3-80ES,127
Manufacturer:
Nexperia USA Inc.
Famaritana antsipirihany:
MOSFET N-CH 80V 120A I2PAK.
Manufacturer's standard lead time:
Ao amin'ny staoky
Fiainana an-trano:
Iray taona
Chip From:
Hong Kong
RoHS:
Fomba fandoavam-bola:
Fomba fandefasana:
Fianakaviana:
KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Diodes - Zener - Iray, Diodes - Miova endrika ny habeny (varicaps, varact, Transistors - Bipolar (BJT) - Single, Transistorio - Bipolar (BJT) - Arrays, Transistors - FET, MOSFET - RF, Ny kristianao - SCR, Tratrao - SCR - Modules and Transistor - FET, MOSFET - Arrays ...
Ny tombony azo amin'ny fifaninanana:
We specialize in Nexperia USA Inc. PSMN4R3-80ES,127 electronic components. PSMN4R3-80ES,127 can be shipped within 24 hours after order. If you have any demands for PSMN4R3-80ES,127, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

PSMN4R3-80ES,127 Toetran'ny vokatra

Ampahany : PSMN4R3-80ES,127
Manufacturer : Nexperia USA Inc.
Description : MOSFET N-CH 80V 120A I2PAK
Series : -
Ampahany : Active
Type FET : N-Channel
teknolojia : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 80V
Ankehitriny - Drain mitohy (Id) @ 25 ° C : 120A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 4.3 mOhm @ 25A, 10V
Vgs (th) (Max) @ Id : 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 111nC @ 10V
Vgs (Max) : ±20V
Fampiasana masinina (Ciss) (Max) @ Vds : 8161pF @ 40V
Fihetsika FET : -
Fandroahana herinaratra (Max) : 306W (Tc)
Ny mari-pana : -55°C ~ 175°C (TJ)
Type Type : Through Hole
Package Fitaovana mpamatsy : I2PAK
Famonosana / tranga : TO-262-3 Long Leads, I²Pak, TO-262AA

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