RN2708JE(TE85L,F) Vidiny (USD) [1060332pcs Stock]
- 1 pcs$0.03488
- Ampahany:
- RN2708JE(TE85L,F)
- Manufacturer:
- Toshiba Semiconductor and Storage
- Famaritana antsipirihany:
- TRANS 2PNP PREBIAS 0.1W ESV.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Ny kristianao - SCR, Diodes - Zener - Iray, Transistors - FETs, MOSFETs - Single, Transistorio - Bipolar (BJT) - Arrays, Diode - Mpitaovana - Arrays, Transistors - IGBTs - tokan-tena, Transistors - Bipolar (BJT) - Single and Diodes - RF ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Toshiba Semiconductor and Storage RN2708JE(TE85L,F) electronic components. RN2708JE(TE85L,F) can be shipped within 24 hours after order. If you have any demands for RN2708JE(TE85L,F), Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RN2708JE(TE85L,F) Toetran'ny vokatra
Ampahany :
RN2708JE(TE85L,F)
Manufacturer :
Toshiba Semiconductor and Storage
Description :
TRANS 2PNP PREBIAS 0.1W ESV
Series :
-
Ampahany :
Active
Type Transistor :
2 PNP - Pre-Biased (Dual)
Ankehitriny - Collector (Ic) (Max) :
100mA
Volonta - Famoronan'ny mpanangom-bokatra :
50V
Resistor - Base (R1) :
22 kOhms
Resistor - Emitter Base (R2) :
47 kOhms
DC ankehitriny Gain (hFE) (Min) @ Ic, Vce :
80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic :
300mV @ 250µA, 5mA
Ankehitriny - Collector Cutoff (Max) :
100nA (ICBO)
Frequency - Tetezamita :
200MHz
Hery - Max :
100mW
Type Type :
Surface Mount
Famonosana / tranga :
SOT-553
Package Fitaovana mpamatsy :
ESV
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