IPI200N25N3GAKSA1 Vidiny (USD) [20198pcs Stock]
- 1 pcs$2.04041
- Ampahany:
- IPI200N25N3GAKSA1
- Manufacturer:
- Infineon Technologies
- Famaritana antsipirihany:
- MOSFET N-CH 250V 64A TO262-3.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Modules maotera mpamily, Transistorio - Bipolar (BJT) - Arrays, Diodes - Miova endrika ny habeny (varicaps, varact, Diodes - RF, Transistors - IGBTs - Tafidina, Transistors - JFET, Diodes - Zener - Iray and Transistors - Bipolar (BJT) - RF ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Infineon Technologies IPI200N25N3GAKSA1 electronic components. IPI200N25N3GAKSA1 can be shipped within 24 hours after order. If you have any demands for IPI200N25N3GAKSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPI200N25N3GAKSA1 Toetran'ny vokatra
Ampahany :
IPI200N25N3GAKSA1
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 250V 64A TO262-3
Series :
OptiMOS™
Ampahany :
Active
Type FET :
N-Channel
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
250V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
64A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
20 mOhm @ 64A, 10V
Vgs (th) (Max) @ Id :
4V @ 270µA
Gate Charge (Qg) (Max) @ Vgs :
86nC @ 10V
Vgs (Max) :
±20V
Fampiasana masinina (Ciss) (Max) @ Vds :
7100pF @ 100V
Fihetsika FET :
-
Fandroahana herinaratra (Max) :
300W (Tc)
Ny mari-pana :
-55°C ~ 175°C (TJ)
Type Type :
Through Hole
Package Fitaovana mpamatsy :
PG-TO262-3
Famonosana / tranga :
TO-262-3 Long Leads, I²Pak, TO-262AA
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