ON Semiconductor - NSBA123JDXV6T1G

KEY Part #: K6529916

[4460pcs Stock]


    Ampahany:
    NSBA123JDXV6T1G
    Manufacturer:
    ON Semiconductor
    Famaritana antsipirihany:
    TRANS 2PNP PREBIAS 0.5W SOT563.
    Manufacturer's standard lead time:
    Ao amin'ny staoky
    Fiainana an-trano:
    Iray taona
    Chip From:
    Hong Kong
    RoHS:
    Fomba fandoavam-bola:
    Fomba fandefasana:
    Fianakaviana:
    KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistors - FET, MOSFET - RF, Transistors - IGBTs - tokan-tena, Transistors - Bipolar (BJT) - Single, mialoha alik, Transistorio - Bipolar (BJT) - Arrays, Transistorio - Bipolar (BJT) - Arrays, mialoha ali, Transistor - FET, MOSFET - Arrays, Diodes - Zener - Iray and Modules maotera mpamily ...
    Ny tombony azo amin'ny fifaninanana:
    We specialize in ON Semiconductor NSBA123JDXV6T1G electronic components. NSBA123JDXV6T1G can be shipped within 24 hours after order. If you have any demands for NSBA123JDXV6T1G, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    NSBA123JDXV6T1G Toetran'ny vokatra

    Ampahany : NSBA123JDXV6T1G
    Manufacturer : ON Semiconductor
    Description : TRANS 2PNP PREBIAS 0.5W SOT563
    Series : -
    Ampahany : Obsolete
    Type Transistor : 2 PNP - Pre-Biased (Dual)
    Ankehitriny - Collector (Ic) (Max) : 100mA
    Volonta - Famoronan'ny mpanangom-bokatra : 50V
    Resistor - Base (R1) : 2.2 kOhms
    Resistor - Emitter Base (R2) : 47 kOhms
    DC ankehitriny Gain (hFE) (Min) @ Ic, Vce : 80 @ 5mA, 10V
    Vce Saturation (Max) @ Ib, Ic : 250mV @ 300µA, 10mA
    Ankehitriny - Collector Cutoff (Max) : 500nA
    Frequency - Tetezamita : -
    Hery - Max : 500mW
    Type Type : Surface Mount
    Famonosana / tranga : SOT-563, SOT-666
    Package Fitaovana mpamatsy : SOT-563

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