Vishay Semiconductor Diodes Division - BYG10JHE3_A/I

KEY Part #: K6439801

BYG10JHE3_A/I Vidiny (USD) [618118pcs Stock]

  • 1 pcs$0.05984
  • 7,500 pcs$0.05471

Ampahany:
BYG10JHE3_A/I
Manufacturer:
Vishay Semiconductor Diodes Division
Famaritana antsipirihany:
DIODE AVALANCHE 600V 1.5A DO214. Rectifiers 1.5A,600V,STD,AVAL AEC-Q101 Qualified
Manufacturer's standard lead time:
Ao amin'ny staoky
Fiainana an-trano:
Iray taona
Chip From:
Hong Kong
RoHS:
Fomba fandoavam-bola:
Fomba fandefasana:
Fianakaviana:
KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Diodes - Mpihazakazaka - Iray, Ny kristianao - SCR, Diodes - Zener - Iray, Diodes - Miova endrika ny habeny (varicaps, varact, Diode - Zener - Arrays, Transistors - FETs, MOSFETs - Single, Transistors - Bipolar (BJT) - RF and Transistor - FET, MOSFET - Arrays ...
Ny tombony azo amin'ny fifaninanana:
We specialize in Vishay Semiconductor Diodes Division BYG10JHE3_A/I electronic components. BYG10JHE3_A/I can be shipped within 24 hours after order. If you have any demands for BYG10JHE3_A/I, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BYG10JHE3_A/I Toetran'ny vokatra

Ampahany : BYG10JHE3_A/I
Manufacturer : Vishay Semiconductor Diodes Division
Description : DIODE AVALANCHE 600V 1.5A DO214
Series : Automotive, AEC-Q101
Ampahany : Active
Type diode : Avalanche
Torohevitra - Reverse DC (Vr) (Max) : 600V
Ankehitriny - salanisa antonony (Io) : 1.5A
Volonta - Mandrosoa (Vf) (Max) @ Raha : 1.15V @ 1.5A
Speed : Standard Recovery >500ns, > 200mA (Io)
Fotoana Famerenana amin'ny laoniny (trr) : 4µs
Ankehitriny - Reverse Leakage @ Vr : 1µA @ 600V
Capacitance @ Vr, F : -
Type Type : Surface Mount
Famonosana / tranga : DO-214AC, SMA
Package Fitaovana mpamatsy : DO-214AC (SMA)
Ny mari-pana tsy miasa - Junction : -55°C ~ 150°C

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