TK6Q65W,S1Q Vidiny (USD) [91009pcs Stock]
- 1 pcs$0.58952
- 75 pcs$0.47262
- 150 pcs$0.41353
- 525 pcs$0.30336
- 1,050 pcs$0.23950
- Ampahany:
- TK6Q65W,S1Q
- Manufacturer:
- Toshiba Semiconductor and Storage
- Famaritana antsipirihany:
- MOSFET N-CH 650V 5.8A IPAK-OS.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Ny thyristors - DIAC, SIDACs, Transistors - FETs, MOSFETs - Single, Tratrao - SCR - Modules, Diodes - RF, Transistors - Bipolar (BJT) - RF, Transistor - Tanjona manokana, Transistorio - Bipolar (BJT) - Arrays and Transistorio - Bipolar (BJT) - Arrays, mialoha ali ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Toshiba Semiconductor and Storage TK6Q65W,S1Q electronic components. TK6Q65W,S1Q can be shipped within 24 hours after order. If you have any demands for TK6Q65W,S1Q, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK6Q65W,S1Q Toetran'ny vokatra
Ampahany :
TK6Q65W,S1Q
Manufacturer :
Toshiba Semiconductor and Storage
Description :
MOSFET N-CH 650V 5.8A IPAK-OS
Series :
DTMOSIV
Ampahany :
Active
Type FET :
N-Channel
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
650V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
5.8A (Ta)
Fandefasana fiara (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
1.05 Ohm @ 2.9A, 10V
Vgs (th) (Max) @ Id :
3.5V @ 180µA
Gate Charge (Qg) (Max) @ Vgs :
11nC @ 10V
Vgs (Max) :
±30V
Fampiasana masinina (Ciss) (Max) @ Vds :
390pF @ 300V
Fihetsika FET :
-
Fandroahana herinaratra (Max) :
60W (Tc)
Ny mari-pana :
150°C (TJ)
Type Type :
Through Hole
Package Fitaovana mpamatsy :
I-PAK
Famonosana / tranga :
TO-251-3 Stub Leads, IPak
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