Vishay Semiconductor Diodes Division - VS-GT50TP60N

KEY Part #: K6533271

VS-GT50TP60N Vidiny (USD) [535pcs Stock]

  • 1 pcs$86.84406
  • 24 pcs$71.23509

Ampahany:
VS-GT50TP60N
Manufacturer:
Vishay Semiconductor Diodes Division
Famaritana antsipirihany:
IGBT 600V 85A 208W INT-A-PAK.
Manufacturer's standard lead time:
Ao amin'ny staoky
Fiainana an-trano:
Iray taona
Chip From:
Hong Kong
RoHS:
Fomba fandoavam-bola:
Fomba fandefasana:
Fianakaviana:
KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistors - Bipolar (BJT) - Single, mialoha alik, Transistor - FET, MOSFET - Arrays, Transistors - IGBTs - tokan-tena, Transistor - Unjunction Programmable, Tratrao - TRIACs, Diode - Mpitaovana - Arrays, Transistors - FET, MOSFET - RF and Ny thyristors - DIAC, SIDACs ...
Ny tombony azo amin'ny fifaninanana:
We specialize in Vishay Semiconductor Diodes Division VS-GT50TP60N electronic components. VS-GT50TP60N can be shipped within 24 hours after order. If you have any demands for VS-GT50TP60N, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

VS-GT50TP60N Toetran'ny vokatra

Ampahany : VS-GT50TP60N
Manufacturer : Vishay Semiconductor Diodes Division
Description : IGBT 600V 85A 208W INT-A-PAK
Series : -
Ampahany : Active
IGBT Type : Trench
Configuration : Half Bridge
Volonta - Famoronan'ny mpanangom-bokatra : 600V
Ankehitriny - Collector (Ic) (Max) : 85A
Hery - Max : 208W
Vce (eo) (Max) @ Vge, Ic : 2.1V @ 15V, 50A
Ankehitriny - Collector Cutoff (Max) : 1mA
Fampitahana Input (Cies) @ Vce : 3.03nF @ 30V
fahan'ny : Standard
NTC Thermistor : No
Ny mari-pana : 175°C (TJ)
Type Type : Chassis Mount
Famonosana / tranga : INT-A-PAK (3 + 4)
Package Fitaovana mpamatsy : INT-A-PAK

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