Infineon Technologies - IPP034NE7N3GXKSA1

KEY Part #: K6398548

IPP034NE7N3GXKSA1 Vidiny (USD) [27185pcs Stock]

  • 1 pcs$1.39261
  • 10 pcs$1.24321
  • 100 pcs$0.96707
  • 500 pcs$0.78307
  • 1,000 pcs$0.66042

Ampahany:
IPP034NE7N3GXKSA1
Manufacturer:
Infineon Technologies
Famaritana antsipirihany:
MOSFET N-CH 75V 100A TO220-3.
Manufacturer's standard lead time:
Ao amin'ny staoky
Fiainana an-trano:
Iray taona
Chip From:
Hong Kong
RoHS:
Fomba fandoavam-bola:
Fomba fandefasana:
Fianakaviana:
KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistors - FET, MOSFET - RF, Ny thyristors - DIAC, SIDACs, Transistorio - Bipolar (BJT) - Arrays, Transistor - Tanjona manokana, Transistors - IGBTs - Modules, Transistors - Bipolar (BJT) - Single, mialoha alik, Diodes - Zener - Iray and Transistors - JFET ...
Ny tombony azo amin'ny fifaninanana:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPP034NE7N3GXKSA1 Toetran'ny vokatra

Ampahany : IPP034NE7N3GXKSA1
Manufacturer : Infineon Technologies
Description : MOSFET N-CH 75V 100A TO220-3
Series : OptiMOS™
Ampahany : Active
Type FET : N-Channel
teknolojia : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 75V
Ankehitriny - Drain mitohy (Id) @ 25 ° C : 100A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 3.4 mOhm @ 100A, 10V
Vgs (th) (Max) @ Id : 3.8V @ 155µA
Gate Charge (Qg) (Max) @ Vgs : 117nC @ 10V
Vgs (Max) : ±20V
Fampiasana masinina (Ciss) (Max) @ Vds : 8130pF @ 37.5V
Fihetsika FET : -
Fandroahana herinaratra (Max) : 214W (Tc)
Ny mari-pana : -55°C ~ 175°C (TJ)
Type Type : Through Hole
Package Fitaovana mpamatsy : PG-TO220-3
Famonosana / tranga : TO-220-3

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