Toshiba Semiconductor and Storage - RN2112,LF(CT

KEY Part #: K6527097

RN2112,LF(CT Vidiny (USD) [2234680pcs Stock]

  • 1 pcs$0.01655

Ampahany:
RN2112,LF(CT
Manufacturer:
Toshiba Semiconductor and Storage
Famaritana antsipirihany:
TRANS PREBIAS PNP 50V 0.1W SSM.
Manufacturer's standard lead time:
Ao amin'ny staoky
Fiainana an-trano:
Iray taona
Chip From:
Hong Kong
RoHS:
Fomba fandoavam-bola:
Fomba fandefasana:
Fianakaviana:
KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Tratrao - TRIACs, Transistorio - Bipolar (BJT) - Arrays, Diodes - Mpihazakazaka - Iray, Diode - Zener - Arrays, Transistors - IGBTs - Tafidina, Transistor - FET, MOSFET - Arrays, Transistors - FET, MOSFET - RF and Transistors - IGBTs - Modules ...
Ny tombony azo amin'ny fifaninanana:
We specialize in Toshiba Semiconductor and Storage RN2112,LF(CT electronic components. RN2112,LF(CT can be shipped within 24 hours after order. If you have any demands for RN2112,LF(CT, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

RN2112,LF(CT Toetran'ny vokatra

Ampahany : RN2112,LF(CT
Manufacturer : Toshiba Semiconductor and Storage
Description : TRANS PREBIAS PNP 50V 0.1W SSM
Series : -
Ampahany : Active
Type Transistor : PNP - Pre-Biased
Ankehitriny - Collector (Ic) (Max) : 100mA
Volonta - Famoronan'ny mpanangom-bokatra : 50V
Resistor - Base (R1) : 22 kOhms
Resistor - Emitter Base (R2) : -
DC ankehitriny Gain (hFE) (Min) @ Ic, Vce : 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
Ankehitriny - Collector Cutoff (Max) : 100nA (ICBO)
Frequency - Tetezamita : 200MHz
Hery - Max : 100mW
Type Type : Surface Mount
Famonosana / tranga : SC-75, SOT-416
Package Fitaovana mpamatsy : SSM