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Samsung Semiconductor - K4ABG085WA-MCWE

KEY Part #: K7359629

[16719pcs Stock]

    Ampahany:
    K4ABG085WA-MCWE
    Manufacturer:
    Samsung Semiconductor
    Famaritana antsipirihany:
    32 Gb 4G x 8 3200 Mbps 1.2 V 0 ~ 85 °C 78FBGA Sample.
    Manufacturer's standard lead time:
    Ao amin'ny staoky
    Fiainana an-trano:
    Iray taona
    Chip From:
    Hong Kong
    RoHS:
    Fomba fandoavam-bola:
    Fomba fandefasana:
    Fianakaviana:
    KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: SLC Nand, MODULE, LPDDR3, GDDR5, GDDR6, LPDDR4X, DDR3 and HBM Flarebolt ...
    Ny tombony azo amin'ny fifaninanana:
    We specialize in Samsung Semiconductor K4ABG085WA-MCWE electronic components. K4ABG085WA-MCWE can be shipped within 24 hours after order. If you have any demands for K4ABG085WA-MCWE, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4ABG085WA-MCWE Toetran'ny vokatra

    Ampahany : K4ABG085WA-MCWE
    Manufacturer : Samsung Semiconductor
    Description : 32 Gb 4G x 8 3200 Mbps 1.2 V 0 ~ 85 °C 78FBGA Sample
    Series : DDR4
    hakitroky : 32 Gb
    Org. : 4G x 8
    Speed : 3200 Mbps
    Zintin'aratra : 1.2 V
    Temp. : 0 ~ 85 °C
    Package : 78FBGA
    Product Status : Sample

    Vaovao farany

    Mission Peak Reference Server System for NGSFF SSD
    Samsung Electronics Begins Mass Production of Industry's First 12GB LPDDR4X-based uMCP
    High Bandwidth Memory is Catching on for Data-intensive Computing
    Speed for the next generation of mobile devices
    How Will 5G Impact on Memory?
    Samsung Now Mass Producing Industry’s First, 20-Nanometer 6Gb LPDDR3 Mobile DRAM
    NF1 SSD, Reach New Heights with Hyper-Scalable Datacenters
    Bringing Artificial Intelligence to Devices Everywhere
    Samsung Z-SSD SZ985
    Samsung’s PM1733 SSD and High Density DIMMs Support AMD EPYC™ 7002 Series Processor
    Samsung Now Mass Producing Industry’s Most Advanced 4Gb DDR3, Using 20 Nanometer Process Technology
    Samsung Honored for Outstanding Design and Engineering with 36 CES 2018 Innovation Awards
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