[4005pcs Stock]
- Ampahany:
- IRFHM8363TR2PBF
- Manufacturer:
- Infineon Technologies
- Famaritana antsipirihany:
- MOSFET 2N-CH 30V 11A 8PQFN.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistors - Bipolar (BJT) - Single, Diodes - RF, Transistors - Bipolar (BJT) - RF, Transistors - JFET, Transistor - FET, MOSFET - Arrays, Transistor - Unjunction Programmable, Diodes - Rectifiers Bridge and Tratrao - TRIACs ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Infineon Technologies IRFHM8363TR2PBF electronic components. IRFHM8363TR2PBF can be shipped within 24 hours after order. If you have any demands for IRFHM8363TR2PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFHM8363TR2PBF Toetran'ny vokatra
Ampahany :
IRFHM8363TR2PBF
Manufacturer :
Infineon Technologies
Description :
MOSFET 2N-CH 30V 11A 8PQFN
Series :
HEXFET®
Ampahany :
Obsolete
Type FET :
2 N-Channel (Dual)
Fihetsika FET :
Logic Level Gate
Drain to Source Voltage (Vdss) :
30V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
11A
Rds On (Max) @ Id, Vgs :
14.9 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id :
2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs :
15nC @ 10V
Fampiasana masinina (Ciss) (Max) @ Vds :
1165pF @ 10V
Hery - Max :
2.7W
Ny mari-pana :
-55°C ~ 150°C (TJ)
Type Type :
Surface Mount
Famonosana / tranga :
8-PowerVDFN
Package Fitaovana mpamatsy :
8-PQFN (3.3x3.3), Power33
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