[3460pcs Stock]
- Ampahany:
- PHD22NQ20T,118
- Manufacturer:
- NXP USA Inc.
- Famaritana antsipirihany:
- MOSFET N-CH 200V 21.1A DPAK.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistor - FET, MOSFET - Arrays, Transistors - Bipolar (BJT) - Single, Diodes - Mpihazakazaka - Iray, Tratrao - SCR - Modules, Diodes - Zener - Iray, Transistorio - Bipolar (BJT) - Arrays, mialoha ali, Transistor - Tanjona manokana and Transistors - JFET ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in NXP USA Inc. PHD22NQ20T,118 electronic components. PHD22NQ20T,118 can be shipped within 24 hours after order. If you have any demands for PHD22NQ20T,118, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PHD22NQ20T,118 Toetran'ny vokatra
Ampahany :
PHD22NQ20T,118
Manufacturer :
NXP USA Inc.
Description :
MOSFET N-CH 200V 21.1A DPAK
Series :
TrenchMOS™
Ampahany :
Obsolete
Type FET :
N-Channel
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
200V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
21.1A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
120 mOhm @ 12A, 10V
Vgs (th) (Max) @ Id :
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
30.8nC @ 10V
Vgs (Max) :
±20V
Fampiasana masinina (Ciss) (Max) @ Vds :
1380pF @ 25V
Fihetsika FET :
-
Fandroahana herinaratra (Max) :
150W (Tc)
Ny mari-pana :
-55°C ~ 175°C (TJ)
Type Type :
Surface Mount
Package Fitaovana mpamatsy :
DPAK
Famonosana / tranga :
TO-252-3, DPak (2 Leads + Tab), SC-63
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