IPB180N06S4H1ATMA2 Vidiny (USD) [42768pcs Stock]
- 1 pcs$0.91424
- 1,000 pcs$0.74580
- Ampahany:
- IPB180N06S4H1ATMA2
- Manufacturer:
- Infineon Technologies
- Famaritana antsipirihany:
- MOSFET N-CH 60V 180A TO263-7.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistorio - Bipolar (BJT) - Arrays, Transistorio - Bipolar (BJT) - Arrays, mialoha ali, Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Single, Tratrao - TRIACs, Diode - Mpitaovana - Arrays, Modules maotera mpamily and Ny thyristors - DIAC, SIDACs ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Infineon Technologies IPB180N06S4H1ATMA2 electronic components. IPB180N06S4H1ATMA2 can be shipped within 24 hours after order. If you have any demands for IPB180N06S4H1ATMA2, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPB180N06S4H1ATMA2 Toetran'ny vokatra
Ampahany :
IPB180N06S4H1ATMA2
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 60V 180A TO263-7
Series :
Automotive, AEC-Q101, OptiMOS™
Ampahany :
Active
Type FET :
N-Channel
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
60V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
180A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
1.7 mOhm @ 100A, 10V
Vgs (th) (Max) @ Id :
4V @ 200µA
Gate Charge (Qg) (Max) @ Vgs :
270nC @ 10V
Vgs (Max) :
±20V
Fampiasana masinina (Ciss) (Max) @ Vds :
21900pF @ 25V
Fihetsika FET :
-
Fandroahana herinaratra (Max) :
250W (Tc)
Ny mari-pana :
-55°C ~ 175°C (TJ)
Type Type :
Surface Mount
Package Fitaovana mpamatsy :
PG-TO263-7-3
Famonosana / tranga :
TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
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