Taiwan Semiconductor Corporation - HS1BL R3G

KEY Part #: K6433529

HS1BL R3G Vidiny (USD) [1102456pcs Stock]

  • 1 pcs$0.03355

Ampahany:
HS1BL R3G
Manufacturer:
Taiwan Semiconductor Corporation
Famaritana antsipirihany:
DIODE GEN PURP 100V 1A SUB SMA. Rectifiers 1A 100V SUPER FAST SMT
Manufacturer's standard lead time:
Ao amin'ny staoky
Fiainana an-trano:
Iray taona
Chip From:
Hong Kong
RoHS:
Fomba fandoavam-bola:
Fomba fandefasana:
Fianakaviana:
KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Diodes - RF, Diodes - Mpihazakazaka - Iray, Transistor - FET, MOSFET - Arrays, Transistor - Unjunction Programmable, Transistors - JFET, Transistors - IGBTs - tokan-tena, Diodes - Miova endrika ny habeny (varicaps, varact and Transistorio - Bipolar (BJT) - Arrays ...
Ny tombony azo amin'ny fifaninanana:
We specialize in Taiwan Semiconductor Corporation HS1BL R3G electronic components. HS1BL R3G can be shipped within 24 hours after order. If you have any demands for HS1BL R3G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

HS1BL R3G Toetran'ny vokatra

Ampahany : HS1BL R3G
Manufacturer : Taiwan Semiconductor Corporation
Description : DIODE GEN PURP 100V 1A SUB SMA
Series : -
Ampahany : Active
Type diode : Standard
Torohevitra - Reverse DC (Vr) (Max) : 100V
Ankehitriny - salanisa antonony (Io) : 1A
Volonta - Mandrosoa (Vf) (Max) @ Raha : 950mV @ 1A
Speed : Fast Recovery =< 500ns, > 200mA (Io)
Fotoana Famerenana amin'ny laoniny (trr) : 50ns
Ankehitriny - Reverse Leakage @ Vr : 5µA @ 100V
Capacitance @ Vr, F : 20pF @ 4V, 1MHz
Type Type : Surface Mount
Famonosana / tranga : DO-219AB
Package Fitaovana mpamatsy : Sub SMA
Ny mari-pana tsy miasa - Junction : -55°C ~ 150°C

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